Publicação
Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications
| datacite.subject.fos | Engenharia e Tecnologia::Engenharia dos Materiais | pt_PT |
| dc.contributor.advisor | Fortunato, Elvira | |
| dc.contributor.advisor | Leturcq, Renaud | |
| dc.contributor.author | Afonso, João Ricardo Antunes | |
| dc.date.accessioned | 2017-11-07T10:49:25Z | |
| dc.date.available | 2018-10-01T00:30:22Z | |
| dc.date.issued | 2017-09 | |
| dc.date.submitted | 2017-11 | |
| dc.description.abstract | Transparent microelectronics applications have been receiving a great amount of research because of the continuous demand for better products from the consumers due to their use in almost every product of the modern-day society. This work comes to explore two of the missing building blocks in completely transparent microelectronics, a capable transparent conductive oxide (TCO) that can substitute indium-tin-oxide (ITO) and a good transparent p-type TCO. The materials studied were ZnO and CuCrO2 that were tuned for a wide range of carrier concentration though changes in deposition parameters and annealing steps. ZnO thin films have shown a wide range of carrier concentration from 8∗1019 approaching 1018 𝑐𝑚−3 and even values above 1020 𝑐𝑚−3, in the case of Aluminium doped ZnO films. An important relationship was discovered during this work, a direct interplay of the mobility with the carrier concentration, 𝜇∝𝑛, that holds in the range between 1018− 3∗1019𝑐𝑚−3. CuCrO2 thin films have shown also a wide range of tunability in terms of carrier concentration from 2∗1021 to 1017 𝑐𝑚−3, showing a progressive increase of optical transmittance from 37% to 60% with the decrease in carrier concentration, which makes them more suitable for transparent electronics applications. A P-N junction was proposed with these materials with a projected type-II band alignment and optimized carrier concentration of about 5∗1018 𝑐𝑚−3 on both sides of the junction. The junction was patterned by etching and photolithography but unfortunately the carrier concentration was not the optimized one, that lead into a ohmic contact. | pt_PT |
| dc.identifier.tid | 202315924 | |
| dc.identifier.uri | http://hdl.handle.net/10362/25055 | |
| dc.language.iso | eng | pt_PT |
| dc.subject | ZnO | pt_PT |
| dc.subject | CuCrO2 | pt_PT |
| dc.subject | Annealing steps | pt_PT |
| dc.subject | Carrier Concentration | pt_PT |
| dc.subject | Transparent P-N Junctions | pt_PT |
| dc.title | Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications | pt_PT |
| dc.type | master thesis | |
| dspace.entity.type | Publication | |
| rcaap.rights | embargoedAccess | pt_PT |
| rcaap.type | masterThesis | pt_PT |
| thesis.degree.name | Mestre em Engenharia de Micro e Nanotecnologias | pt_PT |