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Tuning the electronic properties of ZnO and CuCrO2 though annealing for transparent electronic applications
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Transparent microelectronics applications have been receiving a great amount of research because of the continuous demand for better products from the consumers due to their use in almost every product of the modern-day society. This work comes to explore two of the missing building blocks in completely transparent microelectronics, a capable transparent conductive oxide (TCO) that can substitute indium-tin-oxide (ITO) and a good transparent p-type TCO. The materials studied were ZnO and CuCrO2 that were tuned for a wide range of carrier concentration though changes in deposition parameters and annealing steps. ZnO thin films have shown a wide range of carrier concentration from 8∗1019 approaching 1018 𝑐𝑚−3 and even values above 1020 𝑐𝑚−3, in the case of Aluminium doped ZnO films. An important relationship was discovered during this work, a direct interplay of the mobility with the carrier concentration, 𝜇∝𝑛, that holds in the range between 1018− 3∗1019𝑐𝑚−3. CuCrO2 thin films have shown also a wide range of tunability in terms of carrier concentration from 2∗1021 to 1017 𝑐𝑚−3, showing a progressive increase of optical transmittance from 37% to 60% with the decrease in carrier concentration, which makes them more suitable for transparent electronics applications. A P-N junction was proposed with these materials with a projected type-II band alignment and optimized carrier concentration of about 5∗1018 𝑐𝑚−3 on both sides of the junction. The junction was patterned by etching and photolithography but unfortunately the carrier concentration was not the optimized one, that lead into a ohmic contact.
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ZnO CuCrO2 Annealing steps Carrier Concentration Transparent P-N Junctions