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Characterisation of Ti/Al multilayered structures with slow positron beams applying a simplified positron depth distribution model
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Orientador(es)
Resumo(s)
In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.
Descrição
This worked was support by the Portuguese Foundation for Science and Technology through the project POCTI/FAT/40924/2001 co-financed by European Union fund FEDER.
Palavras-chave
Interfaces Multilayer SIMS Slow positron Thin films General Materials Science Condensed Matter Physics Mechanics of Materials Mechanical Engineering
Contexto Educativo
Citação
Editora
Trans Tech Publications