Please use this identifier to cite or link to this item:
|Title:||A MOSFET-only wideband LNA exploiting thermal noise canceling and gain optimization|
|Author:||Bastos, Ivan Iuri Alves|
|Publisher:||Faculdade de Ciências e Tecnologia|
|Abstract:||In this thesis a MOSFET-only implementation of a balun LNA is presended. This LNA is based on the combination of a common-gate and a common-source stage with canceling of the noise of the common-gate stage. In this circuit, resistors are replaced by transistors, to reduce area and cost, and minimize the e ect of process and supply variations and mismatches. In addition we obtain a higher gain for the same voltage drop. Thus, the LNA gain is optimized, and the noise gure(NF) is reduced. We derive equations for the gain, input matching, and NF. The performance of this new topology is compared with that of a conventional LNA with resistors. Simulation results with a 130 nm CMOS technology show that we obtain a balun LNA with a peak 20.2 dB gain (about 2 dB improvement), and a spot NF lower than 2.4 dB. The total power consumption is only 4.8 mW for a bandwidth wide than 5 GHz.|
|Description:||Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores|
|Appears in Collections:||FCT: DEE - Dissertações de Mestrado|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.