Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Fortunato, Elvira Maria Correia; Figueiredo, Vitor; Barquinha, Pedro Miguel Cândido; Elamurugu, Elangovan; Barros, Raquel; Gonçalves, Gonçalo; Park, Sang Hee Ko; Martins, Rodrigo Ferrão de Paiva; Hwang, Chisun

http://hdl.handle.net/10362/24020

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Autores

Fortunato, Elvira Maria Correia

Figueiredo, Vitor

Barquinha, Pedro Miguel Cândido

Martins, Rodrigo Ferrão de Paiva

Hwang, Chisun

Resumo(s)

Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.

Descrição

ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.

Palavras-chave

Bottom gate Electrical performance Field-effect mobilities On/off ratio P-type Polycrystalline structure rf-Magnetron sputtering Room temperature Electrodeposition Copper oxides Cuprous oxide