Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Utilize este identificador para referenciar este registo: http://hdl.handle.net/10362/24020

Título:	Thin-film transistors based on p-type Cu2O thin films produced at room temperature
Autor:	Fortunato, Elvira Maria Correia Figueiredo, Vitor Barquinha, Pedro Miguel Cândido Elamurugu, Elangovan Barros, Raquel Gonçalves, Gonçalo Park, Sang Hee Ko Martins, Rodrigo Ferrão de Paiva Hwang, Chisun
Palavras-chave:	Bottom gate Electrical performance Field-effect mobilities On/off ratio P-type Polycrystalline structure rf-Magnetron sputtering Room temperature Electrodeposition Copper oxides Cuprous oxide
Data:	2010
Resumo:	Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.
Descrição:	ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.
Peer review:	yes
URI:	http://hdl.handle.net/10362/24020
DOI:	https://doi.org/10.1063/1.3428434
ISSN:	0003-6951
Aparece nas colecções:	FCT: DCM - Artigos em revista internacional com arbitragem científica

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