High mobility transparent amorphous oxide semiconductors thin film transistors for active matrix displays

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Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Publication . Fortunato, Elvira Maria Correia; Figueiredo, Vitor; Barquinha, Pedro Miguel Cândido; Elamurugu, Elangovan; Barros, Raquel; Gonçalves, Gonçalo; Park, Sang Hee Ko; Martins, Rodrigo Ferrão de Paiva; Hwang, Chisun; DCM - Departamento de Ciência dos Materiais; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; AIP - American Institute of Physics

Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.

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Entidade financiadora

Fundação para a Ciência e a Tecnologia

Programa de financiamento

3599-PPCDT

Número da atribuição

PTDC/EEA-ELC/64975/2006