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pMOSFET fabrication using a low temperature pre-deposition technique
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The objective of this work was to develop a fully functional pMOSFET using a new method for dopant pre-deposition done at low temperature (90ºC) using PECVD. This technique has many advantages when compared to the traditional manufacturing method, namely it is more cost effective, simpler and faster. Because it does not require an oxide layer to create the patterns, it can be conjugated with other low temperature techniques.
To obtain a functional pMOSFET, this work was divided in four different studies. The objective of the first study was to achieve metal-semiconductor ohmic contacts. To obtain a perfect ohmic contact of aluminum in a n-type silicon wafer, it is necessary to create a narrow space-charge region in order to allow carrier tunneling. That was reached by using a highly doped n-type hydrogenated amorphous silicon thin film made with a phosphine gas phase concentration of 1.5%, followed by a one-hour diffusion process at 1000ºC. A sheet resistance of 22.9 Ω/□ and a phosphorus surface concentration of 5.2 × 1019 aṫ cm-3 were obtained.
The second study consisted of producing p+n junctions varying the surface concentration and the diffusion time and temperature. The best diodes produced have significantly different profiles. The first was produced with a deep junction and a 0.165% diborane in the gas phase and presents the following parameters: rectification ratio of 6.01 × 103, threshold voltage of 0.53 V and an ideality factor of 1.74. The second diode was produced with a shallow junction and using a 1.5% diborane in the gas phase with the parameters: rectification ration of 3.94 × 103, a threshold voltage of 0.46 V and an ideality factor of 2.58.
Regarding the oxide characteristics for application as gate dielectric (third study), it was determined that the best oxides were produced by wet oxidation with a thickness of about 1300 Å.
After finishing the previous studies, it was possible to produce a fully functional p-type field effect transistor (fourth study). The MOSFETs worked in enhancement mode with the best parameters being: a threshold voltage of -4 V and a field effect mobility of 106.56 cm2/Vs.
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MOSFETs PECVD Low temperature pre-deposition Hydrogenated amorphous silicon Cost effective