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Conductive bridging RAM devices inspired on solid-state biopolymer electrolytes
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Resumo(s)
This work reports the design, fabrication and characterization of metal-insulator-metal (MIM) structures acting as conductive bridging random access memory (CBRAM) devices using biopolymer insulator. Chitosan and hydroxypropyl cellulose (HPC) were deposited by spin coating in between evaporated Pt and Ag electrodes. CBRAM devices fabricated using chitosan as the insulating layer demonstrated retention times of up to 105 s with an on/off ratio of 102 as well as enduring several program/erase cycles. Devices fabricated with HPC showed retention times of up to 104 s with an on/off ratio of approximately 106, and also showed stable device operation over several cycles.
Furthermore, the functionalization of chitosan with silver nanoparticles and its integration in the MIM structures were investigated, as well as the substitution of the e-beam evaporated Ag electrode by a screen printed Ag electrode.
Descrição
Palavras-chave
Chitosan Hydroxypropyl cellulose Resistive switching Electrochemical metallization Conductive bridge Biopolymer