Publicação
Reversible barrier switching of ZnO/RuO2 Schottky diodes
| dc.contributor.author | Wendel, Philipp | |
| dc.contributor.author | Dietz, Dominik | |
| dc.contributor.author | Deuermeier, Jonas | |
| dc.contributor.author | Klein, Andreas | |
| dc.contributor.institution | CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N) | |
| dc.contributor.institution | UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias | |
| dc.contributor.institution | DCM - Departamento de Ciência dos Materiais | |
| dc.contributor.pbl | Molecular Diversity Preservation International (MDPI) | |
| dc.date.accessioned | 2021-11-29T23:38:42Z | |
| dc.date.available | 2021-11-29T23:38:42Z | |
| dc.date.issued | 2021-05-20 | |
| dc.description | project KL1225/8-1 effort PAK 928 UIDB/50025/2020 PTDC/NAN-MAT/30812/2017 | |
| dc.description.abstract | The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. | en |
| dc.description.version | publishersversion | |
| dc.description.version | published | |
| dc.format.extent | 383537 | |
| dc.identifier.doi | 10.3390/ma14102678 | |
| dc.identifier.issn | 1996-1944 | |
| dc.identifier.other | PURE: 32945024 | |
| dc.identifier.other | PURE UUID: 054c98d7-f828-44ca-a1ca-c6848b27df44 | |
| dc.identifier.other | Scopus: 85107005802 | |
| dc.identifier.other | PubMed: 34065310 | |
| dc.identifier.other | PubMedCentral: PMC8161001 | |
| dc.identifier.other | WOS: 000662518500001 | |
| dc.identifier.uri | http://hdl.handle.net/10362/128452 | |
| dc.identifier.url | https://www.scopus.com/pages/publications/85107005802 | |
| dc.language.iso | eng | |
| dc.peerreviewed | yes | |
| dc.subject | Oxygen vacancies | |
| dc.subject | Resistive switching | |
| dc.subject | Ruthenium oxide | |
| dc.subject | Schottky barrier | |
| dc.subject | Zinc oxide | |
| dc.subject | General Materials Science | |
| dc.subject | Condensed Matter Physics | |
| dc.title | Reversible barrier switching of ZnO/RuO2 Schottky diodes | en |
| dc.type | journal article | |
| degois.publication.issue | 10 | |
| degois.publication.title | Materials | |
| degois.publication.volume | 14 | |
| dspace.entity.type | Publication | |
| rcaap.rights | openAccess |
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