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Reversible barrier switching of ZnO/RuO2 Schottky diodes
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Orientador(es)
Resumo(s)
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.
Descrição
project KL1225/8-1 effort PAK 928 UIDB/50025/2020 PTDC/NAN-MAT/30812/2017
Palavras-chave
Oxygen vacancies Resistive switching Ruthenium oxide Schottky barrier Zinc oxide General Materials Science Condensed Matter Physics