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One Dimensional Metal Oxide Semiconductor Nanotransistors
Publication . Cortinhal, Mariana D.; Rovisco, Ana I.B.; Barquinha, Pedro M.C.; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; Faculdade de Ciências e Tecnologia (FCT); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Wiley
The goal of miniaturization in microelectronics catalyzes the evolution of field-effect transistors (FETs), transitioning from classical scaling approaches to innovative architectures like gate-all-around FETs. Among these advancements, nanowire field-effect transistors (NW-FETs) emerge as a promising solution to the limitations of traditional FET designs, offering improved electrostatic control, reduction of short-channel effects, and better overall device performance metrics. Metal oxide nanowires (NWs) provide high mobility, excellent optical transparency, mechanical flexibility, and compatibility with thin-film technology, making them ideal candidates to be the pillar of a new wave of transparent and flexible electronics with unprecedented integration levels. This review highlights the different configurations of NW-FETs, exploring their fabrication techniques and different advantages, as well as state-of-the-art progress in metal oxide NW-FETs, such as zinc oxide (ZnO), indium oxide (In2O3), tin oxide (SnO2), and multicomponent materials. To further improve NW-FET performance, recent developments in doping, surface passivation methods, and post-fabrication treatments are examined, as well as emerging fabrication methodologies. By addressing material limitations and integrating innovative design strategies, metal oxide NW-FETs are set to play a pivotal role in sustaining Moore's Law and shaping the future of nanoelectronics.
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Fundação para a Ciência e a Tecnologia
Programa de financiamento
Concurso de Projetos Exploratórios em Todos os Domínios Científicos 2023
Número da atribuição
2023.11887.PEX