Utilize este identificador para referenciar este registo: http://hdl.handle.net/10362/89369
Título: A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays
Autor: Santos, Ângelo
Tiwari, Bhawna
Martins, Jorge
Santa, Ana
Chapagai, Kamal
Bahubalindruni, Pydi
Barquinha, Pedro
Palavras-chave: Capacitor bootstrapping
IGZO TFTs
Low-voltage operation
Pseudo-CMOS
Shift register
Electrical and Electronic Engineering
Instrumentation
Data: 19-Dez-2018
Editora: Institute of Electrical and Electronics Engineers (IEEE)
Citação: Santos, Â., Tiwari, B., Martins, J., Santa, A., Chapagai, K., Bahubalindruni, P., & Barquinha, P. (2018). A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays. In 2018 International Flexible Electronics Technology Conference, IFETC 2018 Article 8583933 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IFETC.2018.8583933
Resumo: This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.
Descrição: ECR/2017/000931 POCI-01-0145-FEDER-007688 SFRH/BD/122286/2016 ORABAC/17852
Peer review: yes
URI: http://www.scopus.com/inward/record.url?scp=85060692784&partnerID=8YFLogxK
DOI: https://doi.org/10.1109/IFETC.2018.8583933
ISBN: 9781538633571
Aparece nas colecções:FCT: DCM - Documentos de conferências internacionais

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