Electronic excitation to low-lying states of GeF4 molecule by electron impact

Utilize este identificador para referenciar este registo: http://hdl.handle.net/10362/36020

Título:	Electronic excitation to low-lying states of GeF4 molecule by electron impact
Autor:	Ohtomi, S. Matsui, M. Mochizuki, Y. Suga, A. Kato, H. Hoshino, M. Duflot, D. Limão-Vieira, P. Tanaka, Hideaki
Palavras-chave:	SCATTERING SPECTROSCOPY Physics and Astronomy(all)
Data:	7-Set-2015
Editora:	IOP Publishing
Citação:	Ohtomi, S., Matsui, M., Mochizuki, Y., Suga, A., Kato, H., Hoshino, M., Duflot, D., Limão-Vieira, P., & Tanaka, H. (2015). Electronic excitation to low-lying states of GeF4 molecule by electron impact: A comparative study with CF4 and SiF4 molecules. In C. Diaz, I. Rabadan, G. Garcia, L. Mendez, & F. Martin (Eds.), XXIX International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC 2015) (Vol. Part 1-12). Article 072041 (Journal Of Physics: Conference Series; Vol. 635, No. 7). IOP Publishing. https://doi.org/10.1088/1742-6596/635/7/072041
Resumo:	We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.
Peer review:	yes
URI:	http://www.scopus.com/inward/record.url?scp=84948844657&partnerID=8YFLogxK
DOI:	https://doi.org/10.1088/1742-6596/635/7/072041
ISSN:	1742-6588
Aparece nas colecções:	FCT: DF - Documentos de conferências internacionais

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