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Electronic excitation to low-lying states of GeF4 molecule by electron impact
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Resumo(s)
We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.
Descrição
Palavras-chave
SCATTERING SPECTROSCOPY General Physics and Astronomy
Contexto Educativo
Citação
Editora
IOP Publishing