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Title: Fully transparent ZnO thin-film transistor produced at room temperature
Author: Fortunato, Elvira
Barquinha, P. M. C.
Pimentel, A. C. M. B. G.
Gonçalves, A. M. F.
Marques, A. J. S.
Pereira, L. M. N.
Martins, Rodrigo
Keywords: Field-effect transistors
Zinc oxide
Issue Date: Mar-2005
Publisher: Wiley-VCH Verlag GmbH & Co.
Abstract: Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess hard saturation with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V-1 s-1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.
Description: Advanced Materials, Vol. 17, nº 5
Appears in Collections:FCT: CENIMAT - Artigos em revista internacional com arbitragem científica

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