Optimization and integration of room temperature RF sputtered ICO as TCO layers in high-performance SHJ solar cells

In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm2/Vs, a carrier concentration of 1.65 × 1020/cm3, and a resistivity of 8.56 × 10−4 Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (JSC) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.

Descrição

Funding Information: The authors thank the financial support from the SiLEAN project, that has received funding from the European Union's Horizon Europe Programme under GA No. 101147275. Publisher Copyright: © 2025 The Authors

Palavras-chave

Cerium-doped indium oxide Electron mobility Room temperature RF sputtering Short circuit current enhancement Silicon heterojunction solar cells Transparent conductive oxide Electronic, Optical and Magnetic Materials Renewable Energy, Sustainability and the Environment Surfaces, Coatings and Films SDG 7 - Affordable and Clean Energy

URI

http://hdl.handle.net/10362/183816

DOI

10.1016/j.solmat.2025.113637

Coleções

Home collection (FCT)

Métricas Alternativas

Ver registo completo