A carregar...
Publicação
New challenges of printed high-к oxide dielectrics
| Nome: | Descrição: | Tamanho: | Formato: | |
|---|---|---|---|---|
| 522.52 KB | Adobe PDF |
Orientador(es)
Resumo(s)
High-permittivity (к) oxide dielectrics have been widely demanded concerning the Internet of Things (IoT) requirements, such as flexible large-area manufacturing, energy efficiency, low-cost processes, and sustainable electronics, especially in thin-film transistors (TFTs). From there emerged the necessity of printing energy-efficient (vacuum-free) eco-devices using low-temperature methods (e.g., combustion synthesis, post-treatments) in the production and processing of nanomaterials, thus reducing the human carbon footprint. However, currently the main deposition method used is typically spin-coating which requires higher temperatures and long annealing times, not compatible with the printing industry. Besides the concerns with process integration, the market highly demands high-к dielectrics with great stability and high yield. To surpass these challenges, some crucial parameters in the ink design need to be considered to guarantee successful upscale for large-area electronics manufacturing.
Descrição
Palavras-chave
High-к oxide dielectrics Large-scale manufacturing Printed electronics Scale-up challenges Solution-processed Thin film devices Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry SDG 7 - Affordable and Clean Energy SDG 13 - Climate Action