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Low-Voltage High-Speed Ring Oscillator with a-InGaZnO TFTs
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Orientador(es)
Resumo(s)
This paper presents a high-speed ring oscillator (RO) with amorphous Indium-Gallium-Zinc-Oxide Thin-film transistors (a-IGZO TFTs). The proposed RO reduces the delay of a single stage inverter using intermediate signals generated within the RO, hence, improving the speed. To validate the proposed idea, two conventional ROs (with diode-load load inverter and bootstrapped pseudo-CMOS inverter) and the proposed RO were fabricated at a temperature ≤ 180°C. Measured results of the proposed RO have shown a frequency and power-delay-product (PDP) of 173.2 kHz and 0.7 nJ at a supply voltage of 6V. Further, it shows approximately 155% (44%) increase in frequency and 14% (24.5%) decrease in PDP compared to diode-load inverter (bootstrapped pseudo-CMOS inverter) based ROs. Therefore, the proposed RO finds applications in low-voltage and high speed designs for timing signal generation.
Descrição
ECR/2017/000931
POCI-01-0145-FEDER-007688
PTDC/NAN-MAT/30812/2017
Palavras-chave
High speed ring oscillators low-voltage designs oxide TFTs Biotechnology Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering