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Composition-dependent optical properties and dielectric function modeling of PECVD-grown hydrogenated amorphous silicon carbonitride thin films

2026-06Artigo científico Acesso aberto
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dc.contributor.authorVygranenko, Y.
dc.contributor.authorLavareda, G.
dc.contributor.authorAmaral, A.
dc.contributor.authorBrogueira, P.
dc.contributor.institutionCTS - Centro de Tecnologia e Sistemas
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.pblElsevier Science B.V., Amsterdam.
dc.date.accessioned2026-03-27T11:24:01Z
dc.date.available2026-03-27T11:24:01Z
dc.date.issued2026-06
dc.descriptionPublisher Copyright: © 2026 Elsevier B.V.
dc.description.abstractHydrogenated amorphous silicon carbonitride (a-SiCN:H) thin films were deposited by radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) at 150 °C using SiH4, CH4, and NH3 gas mixtures with variable flow ratios. The chemical composition and hydrogen content, determined by Rutherford backscattering and elastic recoil detection analyses, revealed Si-rich carbonitrides containing 32-52 at.% Si, 3-5 at.% C, 16-44 at.% N, and 25-30 at.% H. Atomic force microscopy confirmed smooth and uniform film surfaces with RMS roughness below 1 nm, suitable for precise optical modeling. Optical transmission spectra were analyzed using an extended Tauc-Lorentz (XTL) dispersion model capable of describing non-exponential band-tail absorption. The XTL model provided excellent agreement with experiment and allowed extraction of the real and imaginary parts of the dielectric function, including sub-gap components. The optical bandgap, derived from Tauc plots, increased linearly with the elemental N/Si ratio, reflecting enhanced Si-N bond formation and a reduction in localized electronic states. The refractive index varied between 1.77 and 2.9, showing strong dependence on composition and photon energy. These results demonstrate that rf-PECVD enables low-temperature synthesis of uniform a-SiCN:H films with controllable optical properties, suitable for optoelectronic and photonic device applications.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent9
dc.format.extent5910833
dc.identifier.doi10.1016/j.optmat.2026.117903
dc.identifier.issn0925-3467
dc.identifier.otherPURE: 152078175
dc.identifier.otherPURE UUID: 95801e2d-07b6-4d85-8c06-aa82e9789bd1
dc.identifier.otherScopus: 105028245421
dc.identifier.otherWOS: 001677103900001
dc.identifier.otherORCID: /0000-0002-9840-6329/work/209975220
dc.identifier.urihttp://hdl.handle.net/10362/201872
dc.identifier.urlhttps://www.scopus.com/pages/publications/105028245421
dc.identifier.urlhttps://www.webofscience.com/wos/woscc/full-record/WOS:001677103900001
dc.language.isoeng
dc.peerreviewedyes
dc.subjectA-SiCN:H thin films
dc.subjectDielectric function
dc.subjectExtended Tauc-Lorentz model
dc.subjectOptical bandgap
dc.subjectRefractive index dispersion
dc.subjectrf-PECVD
dc.subjectElectronic, Optical and Magnetic Materials
dc.subjectAtomic and Molecular Physics, and Optics
dc.subjectSpectroscopy
dc.subjectPhysical and Theoretical Chemistry
dc.subjectOrganic Chemistry
dc.subjectInorganic Chemistry
dc.subjectElectrical and Electronic Engineering
dc.titleComposition-dependent optical properties and dielectric function modeling of PECVD-grown hydrogenated amorphous silicon carbonitride thin filmsen
dc.typejournal article
degois.publication.firstPage1
degois.publication.lastPage9
degois.publication.titleOptical Materials
degois.publication.volume174
dspace.entity.typePublication
rcaap.rightsopenAccess

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