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Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors

2024-03Artigo científico Acesso aberto
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dc.contributor.authorBordoni, Camilla
dc.contributor.authorCiavatti, Andrea
dc.contributor.authorCortinhal, Mariana
dc.contributor.authorPereira, Maria
dc.contributor.authorCramer, Tobias
dc.contributor.authorBarquinha, Pedro
dc.contributor.authorFraboni, Beatrice
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.institutionUNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
dc.date.accessioned2024-09-26T22:25:58Z
dc.date.available2024-09-26T22:25:58Z
dc.date.issued2024-03
dc.descriptionFunding Information: The authors acknowledge the funding by the EU—NextGenerationEU—with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. This work also received funding from the European Community’s Horizon Europe program (ERC-POC FLETRAD, Grant Agreement No. 101082283) and from National Funds through the FCT —Fundação para a Ciência e a Tecnologia, I.P.), Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 of the Institute of Nanostructures, Nanomodelling and Nanofabrication—i3N. We would also like to acknowledge the Portuguese Foundation for Science and Technology, under the scope of doctoral Grant Nos. DFA/BD/8335/2020 and 2022.09516.BD, for the support. Publisher Copyright: © 2024 Author(s).
dc.description.abstractRadiation dosimetry is crucial in many fields where the exposure to ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Among solid state detectors, we recently demonstrated that Radiation sensitive OXide Field Effect Transistors (ROXFETs) are excellent candidates for personal dosimetry thanks to their fast response and high sensitivity to x rays. These transistors use indium-gallium-zinc oxide as a semiconductor, combined with a dielectric based on high-permittivity and high-atomic number materials. Here, we present a study on the ROXFET gate dielectric fabricated by atomic layer deposition, where we compare single- and multi-layer structures to determine the best-performing configuration. All the devices show stable operational parameters and high reproducibility among different detectors. We identified an optimized bi-layer dielectric structure made of tantalum oxide and aluminum oxide, which demonstrated a sensitivity of (63 ± 2) V/Gy, an order of magnitude larger than previously reported values. To explain our findings, we propose a model identifying the relevant charge accumulation and recombination processes leading to the large observed transistor threshold voltage shift under ionizing radiation, i.e., of the parameter that directly defines the sensitivity of the device.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent8
dc.format.extent7350699
dc.identifier.doi10.1063/5.0189167
dc.identifier.issn2166-532X
dc.identifier.otherPURE: 99744644
dc.identifier.otherPURE UUID: 10ab596c-81d7-4aed-81b7-41738fed36ef
dc.identifier.otherScopus: 85186756576
dc.identifier.otherWOS: 001180028900004
dc.identifier.urihttp://hdl.handle.net/10362/172490
dc.identifier.urlhttps://www.scopus.com/pages/publications/85186756576
dc.language.isoeng
dc.peerreviewedyes
dc.subjectGeneral Materials Science
dc.subjectGeneral Engineering
dc.titleDielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistorsen
dc.typejournal article
degois.publication.issue3
degois.publication.titleAPL Materials
degois.publication.volume12
dspace.entity.typePublication
rcaap.rightsopenAccess

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