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A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018-07Artigo científico Acesso aberto
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dc.contributor.authorFernandes, Cristina
dc.contributor.authorSanta, Ana
dc.contributor.authorSantos, Ângelo
dc.contributor.authorBahubalindruni, Pydi
dc.contributor.authorDeuermeier, Jonas
dc.contributor.authorMartins, Rodrigo
dc.contributor.authorFortunato, Elvira
dc.contributor.authorBarquinha, Pedro
dc.contributor.institutionUNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.pblWiley
dc.date.accessioned2019-06-04T22:21:33Z
dc.date.available2019-06-04T22:21:33Z
dc.date.issued2018-07
dc.description
dc.description.abstractZinc-tin oxide (ZTO) is widely invoked as a promising indium and gallium-free alternative for amorphous oxide semiconductor based thin-film transistors (TFTs). The main bottleneck of this semiconductor material compared to mainstream indium-gallium-zinc oxide (IGZO) is centered in the larger processing temperatures required to achieve acceptable performance (>300 °C), not compatible with low-cost flexible substrates. This work reports for the first time flexible amorphous-ZTO TFTs processed at a maximum temperature of 180 °C. Different aspects are explored to obtain performance levels comparable to IGZO devices at these low processing temperatures, such as hydrogen incorporation during ZTO sputtering and integration with a high-κ multilayer/multicomponent dielectric. Close-to-zero turn-on voltage, field-effect mobility ≈5 cm2 V-1 s-1, and subthreshold slope of 0.26 V dec-1 are obtained. Stability under negative-bias-illumination stress is dramatically improved with hydrogen incorporation in ZTO and device performance is insensitive to bending under a radius of curvature of 15 mm. Inverters using the ZTO TFTs enable rail-to-rail operation with supply voltage V DD as low as 5 V, while a differential amplifier with positive feedback loop provides a gain of 17 dB and unity gain frequency of 40 kHz, limited by the large gate-to-source and gate-to-drain overlaps used herein.en
dc.description.versionauthorsversion
dc.description.versionpublished
dc.format.extent1996314
dc.identifier.doi10.1002/aelm.201800032
dc.identifier.issn2199-160X
dc.identifier.otherPURE: 4332820
dc.identifier.otherPURE UUID: c28347a3-5725-45de-b59f-690bf4d27342
dc.identifier.otherScopus: 85047622887
dc.identifier.otherWOS: 000437828700004
dc.identifier.otherORCID: /0000-0002-4202-7047/work/54523715
dc.identifier.urihttp://www.scopus.com/inward/record.url?scp=85047622887&partnerID=8YFLogxK
dc.identifier.urlhttps://www.scopus.com/pages/publications/85047622887
dc.language.isoeng
dc.peerreviewedyes
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147333/PT
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/716510/EU
dc.relationTransparent and flexible electronics with embedded energy harvesting based on oxide nanowire devices
dc.relationHigh-performance, Flexible, AUTOnomous Systems manufactured with Unique, Industrial ROLL-to-roll equipments
dc.relationMaterials Synergy Integration for a Better Europe
dc.relation1D Nanofibre Electro-Optic Networks
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/685758/EU
dc.subjectAmorphous semiconductors
dc.subjectFlexible electronics
dc.subjectOxide thin-film transistors
dc.subjectSustainable materials
dc.subjectZinc-tin oxide
dc.subjectElectronic, Optical and Magnetic Materials
dc.titleA Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistorsen
dc.typejournal article
degois.publication.issue7
degois.publication.titleAdvanced Electronic Materials
degois.publication.volume4
dspace.entity.typePublication
oaire.awardNumberUID/CTM/50025/2013
oaire.awardNumber716510
oaire.awardNumber644631
oaire.awardNumber692373
oaire.awardNumber685758
oaire.awardTitleTransparent and flexible electronics with embedded energy harvesting based on oxide nanowire devices
oaire.awardTitleHigh-performance, Flexible, AUTOnomous Systems manufactured with Unique, Industrial ROLL-to-roll equipments
oaire.awardTitleMaterials Synergy Integration for a Better Europe
oaire.awardTitle1D Nanofibre Electro-Optic Networks
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F50025%2F2013/PT
oaire.awardURIinfo:eu-repo/grantAgreement/EC/H2020/716510/EU
oaire.awardURIinfo:eu-repo/grantAgreement/EC/H2020/644631/EU
oaire.awardURIinfo:eu-repo/grantAgreement/EC/H2020/692373/EU
oaire.awardURIinfo:eu-repo/grantAgreement/EC/H2020/685758/EU
oaire.fundingStream5876
oaire.fundingStreamH2020
oaire.fundingStreamH2020
oaire.fundingStreamH2020
oaire.fundingStreamH2020
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameEuropean Commission
project.funder.nameEuropean Commission
project.funder.nameEuropean Commission
project.funder.nameEuropean Commission
rcaap.rightsopenAccess
relation.isProjectOfPublicationd94394ca-c419-4430-9491-83be2361e7a8
relation.isProjectOfPublication87678232-c1a4-4b94-8693-c8acdd247125
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