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Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

2019-02-19Artigo científico Acesso aberto
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dc.contributor.authorDeuermeier, Jonas
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorKlein, Andreas
dc.contributor.authorMartins, Rodrigo
dc.contributor.authorFortunato, Elvira
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionUNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.pblMDPI AG
dc.date.accessioned2019-06-07T22:09:45Z
dc.date.available2019-06-07T22:09:45Z
dc.date.issued2019-02-19
dc.descriptionThis research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).
dc.description.abstractMulti-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent3342520
dc.identifier.doi10.3390/nano9020289
dc.identifier.issn2079-4991
dc.identifier.otherPURE: 13512022
dc.identifier.otherPURE UUID: 8e2d0fac-ff46-49b1-b34b-86e0c21fdfec
dc.identifier.otherPubMed: 30791401
dc.identifier.otherPubMedCentral: PMC6410279
dc.identifier.otherScopus: 85071017113
dc.identifier.otherWOS: 000460806700158
dc.identifier.otherORCID: /0000-0002-4202-7047/work/58061788
dc.identifier.otherORCID: /0000-0002-8422-5762/work/115387067
dc.identifier.urihttp://hdl.handle.net/10362/72025
dc.language.isoeng
dc.peerreviewedyes
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147333/PT
dc.subjectresistive switching memories
dc.subjectmulti-level cell
dc.subjectcopper oxide
dc.subjectgrain boundaries
dc.subjectaluminum oxide
dc.titleMulti-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Deviceen
dc.typejournal article
degois.publication.issue2
degois.publication.titleNanomaterials
degois.publication.volume9
dspace.entity.typePublication
oaire.awardNumberUID/CTM/50025/2013
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F50025%2F2013/PT
oaire.fundingStream5876
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccess
relation.isProjectOfPublicationd94394ca-c419-4430-9491-83be2361e7a8
relation.isProjectOfPublication.latestForDiscoveryd94394ca-c419-4430-9491-83be2361e7a8

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