Logo do repositório
 
Publicação

Pathways to high-performance extreme ultra-violet lithography resists

2025-12-19Artigo científico Acesso aberto
Ver registo simples
dc.contributor.authorMendes, Mónica
dc.contributor.authorTafrishi, Reza
dc.contributor.authorGuerra, Pedro
dc.contributor.authorHolzmeier, Fabian
dc.contributor.authorIngólfsson, Oddur
dc.contributor.authorSilva, Filipe Ferreira da
dc.contributor.institutionCeFITec – Centro de Física e Investigação Tecnológica
dc.contributor.institutionDF – Departamento de Física
dc.contributor.pblElsevier
dc.date.accessioned2026-01-30T15:30:01Z
dc.date.available2026-01-30T15:30:01Z
dc.date.issued2025-12-19
dc.descriptionPublisher Copyright: © 2025 The Authors
dc.description.abstractTo fully enfold the significant advantage of extreme ultraviolet lithography (EUVL) in the high-volume realization of the next generation technology nodes, high sensitivity EUVL resist formulations, tailored to the electron driven chemistry triggered in EUVL are essential. Here we address this by studying low energy electron-driven chemistry of pentafluorophenyl triflate, a neutral phenyl ester photo acid generator (PAG), i.e., a critical component of the commonly used chemically amplified resist (CAR) formulations. We present an experimental and theoretical study on dissociative electron attachment (DEA) to this compound, and we show that DEA rather quenches, than promotes its intended acid generation. We argue that these findings are general to currently proposed neutral ester PAGs for EUVL, and we propose an approach where this may be upturned, and DEA may contribute significantly to the critical acid generation in CARs up on EUV exposure and thus the sensitivity of these resists.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent12
dc.format.extent63983
dc.identifier.doi10.1016/j.isci.2025.114020
dc.identifier.issn2589-0042
dc.identifier.otherPURE: 151571719
dc.identifier.otherPURE UUID: 8fec0d06-10ae-4319-8132-39433500e01a
dc.identifier.otherScopus: 105022920324
dc.identifier.otherWOS: 001631484500015
dc.identifier.otherPubMed: 41399514
dc.identifier.otherPubMedCentral: PMC12702258
dc.identifier.otherORCID: /0000-0002-2182-2965/work/204221473
dc.identifier.urihttp://hdl.handle.net/10362/199883
dc.identifier.urlhttps://www.scopus.com/pages/publications/105022920324
dc.identifier.urlhttps://www.webofscience.com/wos/woscc/full-record/WOS:001631484500015
dc.language.isoeng
dc.peerreviewedyes
dc.subjectGeneral
dc.titlePathways to high-performance extreme ultra-violet lithography resistsen
dc.title.subtitleDissociative electron attachment to pentafluoro-phenyl triflateen
dc.typejournal article
degois.publication.firstPage1
degois.publication.issue12
degois.publication.lastPage12
degois.publication.titleISCIENCE
degois.publication.volume28
dspace.entity.typePublication
rcaap.rightsopenAccess

Ficheiros

Principais
A mostrar 1 - 1 de 1
Miniatura indisponível
Nome:
Mendes_et_al._2025_..pdf
Tamanho:
62.48 KB
Formato:
Adobe Portable Document Format
Ver/Abrir

Coleções

Home collection (FCT)