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Perspective

2023-11Artigo científico Acesso aberto
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dc.contributor.authorSilva, Carlos
dc.contributor.authorDeuermeier, Jonas
dc.contributor.authorZhang, Weidong
dc.contributor.authorCarlos, Emanuel
dc.contributor.authorBarquinha, Pedro
dc.contributor.authorMartins, Rodrigo
dc.contributor.authorKiazadeh, Asal
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.institutionUNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
dc.contributor.pblWiley
dc.date.accessioned2024-01-24T17:05:23Z
dc.date.available2024-01-24T17:05:23Z
dc.date.issued2023-11
dc.descriptionprojects Supreme‐IT (EXPL/CTM‐REF/0978/2021). Funding was also received through the TERRAMETA project from the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union's Horizon Europe research and innovation programme under Grant Agreement No 101097101. Partially supported by the Engineering and Physical Sciences Research Council (EPSRC) of U.K. (Grant No. EP/S000259/1). After initial online publication the notation “a)” and “b)” was added to table 1, in November 2023. Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
dc.description.abstractAs the Internet of things (IOT) industry continues to grow with an ever-increasing number of connected devices, the need for processing large amounts of data in a fast and energy-efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in-memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco-friendly zinc-tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low-cost, and critical-raw-material-free composition. In this perspective article, the research progress on ZTO-based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent16
dc.format.extent4392343
dc.identifier.doi10.1002/aelm.202300286
dc.identifier.issn2199-160X
dc.identifier.otherPURE: 82002614
dc.identifier.otherPURE UUID: 3254b0ee-c441-4dcd-aaf8-019c7ef109ca
dc.identifier.otherScopus: 85170376599
dc.identifier.otherWOS: 001061407600001
dc.identifier.otherORCID: /0000-0002-5956-5757/work/151409144
dc.identifier.otherORCID: /0000-0002-8422-5762/work/151444113
dc.identifier.urihttp://hdl.handle.net/10362/162715
dc.identifier.urlhttps://www.scopus.com/pages/publications/85170376599
dc.language.isoeng
dc.peerreviewedyes
dc.relationFunding Information: info:eu-repo/grantAgreement/FCT//2021.07840.BD/PT
dc.relationinfo:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND%2FCP1657%2FCT0002/PT
dc.relationPhoto-induced memristive devices for neuromorphic computing
dc.relationInstitute of Nanostructures, Nanomodelling and Nanofabrication
dc.relationInstitute of Nanostructures, Nanomodelling and Nanofabrication
dc.relationinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.08132.PTDC/PT
dc.subjectneuromorphic
dc.subjectresistive switching
dc.subjectsustainable
dc.subjectZTO
dc.subjectElectronic, Optical and Magnetic Materials
dc.titlePerspectiveen
dc.title.subtitleZinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devicesen
dc.typejournal article
degois.publication.issue11
degois.publication.titleAdvanced Electronic Materials
degois.publication.volume9
dspace.entity.typePublication
oaire.awardNumber2021.03386.CEECIND/CP1657/CT0002
oaire.awardNumberLA/P/0037/2020
oaire.awardNumberUIDP/50025/2020
oaire.awardNumber2022.08132.PTDC
oaire.awardTitlePhoto-induced memristive devices for neuromorphic computing
oaire.awardTitleInstitute of Nanostructures, Nanomodelling and Nanofabrication
oaire.awardTitleInstitute of Nanostructures, Nanomodelling and Nanofabrication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/CEEC IND4ed/2021.03386.CEECIND%2FCP1657%2FCT0002/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/LA%2FP%2F0037%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/2022.08132.PTDC/PT
oaire.fundingStreamCEEC IND4ed
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream3599-PPCDT
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccess
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