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Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistor

2020-03-21Artigo científico Acesso aberto
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dc.contributor.authorOluwabi, Abayomi T.
dc.contributor.authorKaterski, Atanas
dc.contributor.authorCarlos, Emanuel
dc.contributor.authorBranquinho, Rita
dc.contributor.authorMere, Arvo
dc.contributor.authorKrunks, Malle
dc.contributor.authorFortunato, Elvira
dc.contributor.authorPereira, Luis
dc.contributor.authorOja Acik, Ilona
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionUNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
dc.contributor.pblRSC - Royal Society of Chemistry
dc.date.accessioned2020-03-06T23:32:10Z
dc.date.available2020-03-06T23:32:10Z
dc.date.issued2020-03-21
dc.descriptionproject IUT194 UID/CTM/50025/2019 project TK141 Grant Agreement 17161 SFRH/BD/116047/2016
dc.description.abstractSolution processing of metal oxides has been the focal point of interest for many researchers mainly because of the cost effectiveness and improved properties of metal oxides. However, achieving uniform and high-quality film deposition has been a recurring challenge using various wet-chemical techniques. Herein, we report a fully solution-based fabrication process exploiting both the ultrasonic spray pyrolysis (USP) and spin coating techniques owing to their simplicity, high degree of freedom for mixing metal oxide precursor salt, and larger area deposition. An amorphous zirconium oxide (ZrOx) dielectric and zinc tin oxide (ZTO) semiconductor were deposited, respectively. The dielectric characteristics of the ZrOx thin films were accessed by fabricating MIS-devices for the samples deposited at 200 °C and 400 °C, which exhibited a capacitance of 0.35 and 0.67 μF cm−2 at 100 kHz and relative permittivity of 8.5 and 22.7, respectively. The ZrOx thin film was then integrated as the gate dielectric layer in ZTO solution-processed thin film transistors, exhibiting a high electrical performance with low hysteresis (−0.18 V), high on/off current ratio of 106 orders of magnitude, saturation mobility of 4.6 cm2 V s−1, subthreshold slope of 0.25 V dec−1, and operating at a low voltage window of 3 V. Based on these results, the as-fabricated ZTO/ZrOx TFT opens the potential application of solution-processed transistors for low-cost electronic devices.en
dc.description.versionpublishersversion
dc.description.versionpublished
dc.format.extent3827379
dc.identifier.doi10.1039/C9TC05127A
dc.identifier.issn2050-7526
dc.identifier.otherPURE: 17083954
dc.identifier.otherPURE UUID: 8b2a615a-a7d8-4e6b-9e9a-b90e899b38c0
dc.identifier.otherBibtex: C9TC05127A
dc.identifier.otherORCID: /0000-0002-4202-7047/work/70243840
dc.identifier.otherORCID: /0000-0001-9771-8366/work/70243853
dc.identifier.otherScopus: 85082396959
dc.identifier.otherWOS: 000528591300011
dc.identifier.otherORCID: /0000-0002-5956-5757/work/90912019
dc.identifier.urihttp://hdl.handle.net/10362/93930
dc.language.isoeng
dc.peerreviewedyes
dc.titleApplication of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistoren
dc.typejournal article
degois.publication.firstPage3730
degois.publication.issue11
degois.publication.lastPage3739
degois.publication.titleJournal of Materials Chemistry C
degois.publication.volume8
dspace.entity.typePublication
rcaap.rightsopenAccess

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