A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

Keragodu, Tejaswini; Tiwari, Bhawna; Nishtha; Bahubalindruni, Pydi; Goes, Joao; Barquinha, Pedro

http://hdl.handle.net/10362/89368

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Resumo(s)

This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.

Descrição

early career research grant with project ref. ECR/2017/000931. National Funds through FCT - Portuguese Foundation for Science and Technology POCI-01-0145-FEDER-007688

Palavras-chave

a-IGZO TFTs comparator with oxide TFTs positive feedback operational amplifier Relaxation Oscillator Voltage Controlled Oscillator Electrical and Electronic Engineering