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Field Effect Sensors for Nucleic Acid Detection

dc.contributor.authorVeigas, Bruno
dc.contributor.authorBaptista, Pedro Miguel Ribeiro Viana
dc.contributor.authorFortunato, Elvira
dc.contributor.institutionCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
dc.contributor.institutionUCIBIO - Applied Molecular Biosciences Unit
dc.contributor.institutionDCM - Departamento de Ciência dos Materiais
dc.contributor.institutionDCV - Departamento de Ciências da Vida
dc.contributor.pblMDPI - Multidisciplinary Digital Publishing Institute
dc.date.accessioned2018-11-09T23:08:43Z
dc.date.available2018-11-09T23:08:43Z
dc.date.issued2015-05-04
dc.descriptionFundacao para a Ciencia e a Tecnologia (FCT-MEC) PEst-OE/SAU/UI0009/2013-14 PTDC/BBB-NAN/1812/2012 SFRH/BD/78970/2011 UID/CTM/500025/2013 EXCL/CTM-NAN/0201/2012
dc.description.abstractIn the last decade the use of field-effect-based devices has become a basic structural element in a new generation of biosensors that allow label-free DNA analysis. In particular, ion sensitive field effect transistors (FET) are the basis for the development of radical new approaches for the specific detection and characterization of DNA due to FETs' greater signal-to-noise ratio, fast measurement capabilities, and possibility to be included in portable instrumentation. Reliable molecular characterization of DNA and/or RNA is vital for disease diagnostics and to follow up alterations in gene expression profiles. FET biosensors may become a relevant tool for molecular diagnostics and at point-of-care. The development of these devices and strategies should be carefully designed, as biomolecular recognition and detection events must occur within the Debye length. This limitation is sometimes considered to be fundamental for FET devices and considerable efforts have been made to develop better architectures. Herein we review the use of field effect sensors for nucleic acid detection strategiesfrom production and functionalization to integration in molecular diagnostics platforms, with special focus on those that have made their way into the diagnostics lab.en
dc.description.versionpublished
dc.format.extent19
dc.format.extent1501594
dc.identifier.doi10.3390/s150510380
dc.identifier.issn1424-8220
dc.identifier.otherPURE: 1252935
dc.identifier.otherPURE UUID: 538fb5bd-f1da-4960-935c-50150bb4cdaa
dc.identifier.otherWOS: 000357183100041
dc.identifier.otherScopus: 84929346548
dc.identifier.otherPubMed: 25946631
dc.identifier.otherORCID: /0000-0001-5255-7095/work/54824807
dc.identifier.otherORCID: /0000-0002-4202-7047/work/50464926
dc.identifier.urihttps://www.mdpi.com/1424-8220/15/5/10380
dc.identifier.urlhttps://www.mdpi.com/1424-8220/15/5/10380
dc.language.isoeng
dc.peerreviewedyes
dc.subjectfield effect
dc.subjectTFT
dc.subjectISFET
dc.subjectEIS
dc.subjectSiNW
dc.subjectDNA
dc.subjectLAMP
dc.subjectqRT-PCR
dc.subjectlabel free
dc.subjectLABEL-FREE DETECTION
dc.subjectELECTROLYTE-INSULATOR-SEMICONDUCTOR
dc.subjectTHIN-FILM TRANSISTORS
dc.subjectDNA HYBRIDIZATION DETECTION
dc.subjectCHEMICAL-VAPOR-DEPOSITION
dc.subjectATOMIC LAYER DEPOSITION
dc.subjectSILICON NANOWIRE
dc.subjectOPTICAL-PROPERTIES
dc.subjectEFFECT DEVICES
dc.subjectCHARGE SENSOR
dc.titleField Effect Sensors for Nucleic Acid Detectionen
dc.title.subtitleRecent Advances and Future Perspectivesen
dc.typereview
degois.publication.firstPage10380
degois.publication.issue5
degois.publication.lastPage10398
degois.publication.titleSensors
degois.publication.volume15
dspace.entity.typePublication
rcaap.rightsopenAccess

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