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Projeto de investigação
Development of Perovskite Solar Cells on Paper Based Substrates
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Physically-Deposited Hole Transporters in Perovskite PV
Publication . Akalin, Salih Alper; Erol, Mustafa; Uzunbayir, Begum; Oguzlar, Sibel; Yildirim, Serdar; Gokdemir Choi, Fatma Pinar; Gunes, Serap; Yilmazer Menda, Ugur Deneb; Mendes, Manuel J.; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Wiley
Nickel oxide (NiOx) has received a lot of attention as an inorganic hole transport material (HTM) in perovskite solar cells (PSCs) during the last decade, owing to its high hole mobility, chemical stability, good optical transparency, and suitable energy levels that align with the valance band of the perovskite absorber methylammonium lead iodide (MAPbI3). This study explores Li and Mg co-doped NiOx thin films physically-deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. After sputtering, the structural, elemental, morphological, optical, and electrical properties of the layers are investigated by XRD, XPS, SEM, AFM, UV–vis spectrophotometer, and Hall-effect; revealing that crystalline, homogeneous, and smooth films are obtained. In particular, improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass-indium tin oxide (ITO)/NiOx-based HTM/MAPbI3/phenyl butryic acid methyl ester (PCBM)/bathocuproine (BCP)/Ag architecture. The champion solar cell achieves PCE of 15.52%. In addition, the average values of all samples are boosted, JSC (from 13.21 to 15.60 mA cm−2) and FF (from 59.32% to 67.7%), relative to pristine HTM, resulting in a pronounced PCE increment of up to 30% with the HTM film sputtered by a single target of co-doped material.
Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
Publication . Ribeiro, G.; Ferreira, G.; Menda, U. D.; Alexandre, M.; Brites, M. J.; Barreiros, M. A.; Jana, S.; Águas, H.; Martins, R.; Fernandes, P. A.; Salomé, P.; Mendes, M. J.; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; MDPI AG
By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
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Entidade financiadora
Fundação para a Ciência e a Tecnologia
Programa de financiamento
3599-PPCDT
Número da atribuição
2022.02954.PTDC