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Projeto de investigação
Oxide nanowire memsensing platform integrated with nanoscale oxide thin-film transistors circuitry for monitoring of infectious respiratory diseases and air quality
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One Dimensional Metal Oxide Semiconductor Nanotransistors
Publication . Cortinhal, Mariana D.; Rovisco, Ana I.B.; Barquinha, Pedro M.C.; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; Faculdade de Ciências e Tecnologia (FCT); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Wiley
The goal of miniaturization in microelectronics catalyzes the evolution of field-effect transistors (FETs), transitioning from classical scaling approaches to innovative architectures like gate-all-around FETs. Among these advancements, nanowire field-effect transistors (NW-FETs) emerge as a promising solution to the limitations of traditional FET designs, offering improved electrostatic control, reduction of short-channel effects, and better overall device performance metrics. Metal oxide nanowires (NWs) provide high mobility, excellent optical transparency, mechanical flexibility, and compatibility with thin-film technology, making them ideal candidates to be the pillar of a new wave of transparent and flexible electronics with unprecedented integration levels. This review highlights the different configurations of NW-FETs, exploring their fabrication techniques and different advantages, as well as state-of-the-art progress in metal oxide NW-FETs, such as zinc oxide (ZnO), indium oxide (In2O3), tin oxide (SnO2), and multicomponent materials. To further improve NW-FET performance, recent developments in doping, surface passivation methods, and post-fabrication treatments are examined, as well as emerging fabrication methodologies. By addressing material limitations and integrating innovative design strategies, metal oxide NW-FETs are set to play a pivotal role in sustaining Moore's Law and shaping the future of nanoelectronics.
Printed Zinc Tin Oxide Memristors for Reservoir Computing
Publication . Azevedo Martins, Raquel; Silva, Carlos; Deuermeier, Jonas; Milano, Gianluca; Rosero-Realpe, Mateo; Parreira, Carolina; Fortunato, Elvira; Martins, Rodrigo; Kiazadeh, Asal; Carlos, Emanuel; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); John Wiley and Sons Inc.
In this work, fully patterned zinc tin oxide (ZTO) memristors are introduced using inkjet printing. By targeting a scalable, solution-based fabrication approach, highly stable devices with excellent reproducibility and minimal variability are achieved, using ZTO as the active layer, silver (Ag) as the top electrode, and molybdenum as the bottom electrode. The use of sustainable materials like ZTO enhances scalability and environmental compatibility, paving the way for next-generation, low-power neuromorphic computing. The devices successfully fulfill the fundamental criteria for in materia implementation of physical reservoir computing (PRC), including nonlinearity and fading memory property. The devices are successfully trained for classification tasks with MNIST handwritten dataset, achieving 89.4% accuracy and 86.5% by processing 4-bit and 5-bit input temporal sequences. The integration of printed memristors into hardware-based PRC architecture simplifies training complexity, making them particularly advantageous for energy-efficient, wearable AI systems.
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Fundação para a Ciência e a Tecnologia
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Projetos de IC&DT Portugal Índia
Número da atribuição
DRI/India/0430/2020