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Projeto de investigação
Photo-induced memristive devices for neuromorphic computing
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Publicações
Low-Temperature Solution-Based Molybdenum Oxide Memristors
Publication . Martins, RA; Carlos, E; Kiazadeh, A; Martins, RA; Deuermeier, J; DCM - Departamento de Ciência dos Materiais; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; ACS - American Chemical Society
Perspective
Publication . Silva, Carlos; Deuermeier, Jonas; Zhang, Weidong; Carlos, Emanuel; Barquinha, Pedro; Martins, Rodrigo; Kiazadeh, Asal; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Wiley
As the Internet of things (IOT) industry continues to grow with an ever-increasing number of connected devices, the need for processing large amounts of data in a fast and energy-efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in-memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco-friendly zinc-tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low-cost, and critical-raw-material-free composition. In this perspective article, the research progress on ZTO-based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.
Printed Zinc Tin Oxide Memristors for Reservoir Computing
Publication . Azevedo Martins, Raquel; Silva, Carlos; Deuermeier, Jonas; Milano, Gianluca; Rosero-Realpe, Mateo; Parreira, Carolina; Fortunato, Elvira; Martins, Rodrigo; Kiazadeh, Asal; Carlos, Emanuel; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); John Wiley and Sons Inc.
In this work, fully patterned zinc tin oxide (ZTO) memristors are introduced using inkjet printing. By targeting a scalable, solution-based fabrication approach, highly stable devices with excellent reproducibility and minimal variability are achieved, using ZTO as the active layer, silver (Ag) as the top electrode, and molybdenum as the bottom electrode. The use of sustainable materials like ZTO enhances scalability and environmental compatibility, paving the way for next-generation, low-power neuromorphic computing. The devices successfully fulfill the fundamental criteria for in materia implementation of physical reservoir computing (PRC), including nonlinearity and fading memory property. The devices are successfully trained for classification tasks with MNIST handwritten dataset, achieving 89.4% accuracy and 86.5% by processing 4-bit and 5-bit input temporal sequences. The integration of printed memristors into hardware-based PRC architecture simplifies training complexity, making them particularly advantageous for energy-efficient, wearable AI systems.
Printed Memristors
Publication . Franco, Miguel; Kiazadeh, Asal; Martins, Rodrigo; Lanceros-Méndez, Senentxu; Carlos, Emanuel; DCM - Departamento de Ciência dos Materiais; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Wiley
Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential increase in generated data. The current semiconductor technology is facing challenges in miniaturization and power consumption, demanding for more efficient computation where new materials and devices need to be implemented. One of the most promising candidates for the next technological leap is the memristor. Due to their up-scale manufacturing, the majority of memristors employed conventional deposition techniques (physical and chemical vapor deposition), which can be highly costly. Recently, printed memristors have gained a lot of attention because of their potential for large-scale, fast, and affordable manufacturing. They can also help to reduce material waste, which supports the transition to a more sustainable and environmentally friendly economy. This review provides a perspective on the potential of printed electronics in the fabrication of memristive devices, presenting an overview of the main printing techniques, most suitable for memristors development. Additionally, it focuses on the materials used for the switching layer by comparing its performance. Ultimately, the application of printed memristors is highlighted by showing the tremendous evolution in this field, as well as the main challenges and opportunities that printed memristors are expected to face in the following years.
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Publication . Pereira, Maria Elias; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro; Kiazadeh, Asal; DCM - Departamento de Ciência dos Materiais; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; Institute of Physics
Neuromorphic computing has been gaining momentum for the past decades and has been appointed as the replacer of the outworn technology in conventional computing systems. Artificial neural networks (ANNs) can be composed by memristor crossbars in hardware and perform in-memory computing and storage, in a power, cost and area efficient way. In optoelectronic memristors (OEMs), resistive switching (RS) can be controlled by both optical and electronic signals. Using light as synaptic weigh modulator provides a high-speed non-destructive method, not dependent on electrical wires, that solves crosstalk issues. In particular, in artificial visual systems, OEMs can act as the artificial retina and combine optical sensing and high-level image processing. Therefore, several efforts have been made by the scientific community into developing OEMs that can meet the demands of each specific application. In this review, the recent advances in inorganic OEMs are summarized and discussed. The engineering of the device structure provides the means to manipulate RS performance and, thus, a comprehensive analysis is performed regarding the already proposed memristor materials structure and their specific characteristics. Moreover, their potential applications in logic gates, ANNs and, in more detail, on artificial visual systems are also assessed, taking into account the figures of merit described so far.
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Entidade financiadora
Fundação para a Ciência e a Tecnologia
Programa de financiamento
CEEC IND4ed
Número da atribuição
2021.03386.CEECIND/CP1657/CT0002