FABRICATION OF SNOX BASED P-TYPE TRANSPARENT THIN FILM TRANSISTORS USING RF MAGNETRON SPUTTERING

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Role of structure and composition on the performances of P-type tin oxide thin-film transistors processed at low-temperatures

Publication . Barros, Raquel; Saji, Kachirayil J.; Waerenborgh, João C.; Barquinha, Pedro; Pereira, Luís; Carlos, Emanuel; Martins, Rodrigo; Fortunato, Elvira; UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); DCM - Departamento de Ciência dos Materiais; MDPI AG

This work reports on the role of structure and composition on the determination of the performances of p-type SnO x TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 ◦ C at different oxygen partial pressures (O pp ) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm 2 V −1 s −1 and on-off ratio above 7 × 10 4 , operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnO x TFTs with different methods and using different device configurations.

2019-03-01Artigo científico

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Fundação para a Ciência e a Tecnologia

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SFRH/BPD/62942/2009