An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

Ghumman, C. A. A.; Moutinho, A. M. C.; Santos, A.; Teodoro, O. M. N. D.; Tolstogouzov, A.

http://hdl.handle.net/10362/76908

Utilize este identificador para referenciar este registo.

Nome:	Descrição:	Tamanho:	Formato:
An_upgraded_TOF_SIMS_VG_Ionex_IX23LS_study_on_the_negative_secondary_ion.pdf		2.16 MB	Adobe PDF	Ver/Abrir

Contacte-nos

Autores

Resumo(s)

A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.