Utilize este identificador para referenciar este registo: http://hdl.handle.net/10362/125421
Título: Graphene oxide layer-by-layer films for sensors and devices
Autor: Assunção, Ivan C. C.
Sério, Susana
Ferreira, Quirina
Jones, Nykola C.
Hoffmann, Søren V.
Ribeiro, Paulo A.
Raposo, Maria
Palavras-chave: Graphene oxide
Layer-by-layer films
Sensors
Solar cells
Vacuum ultraviolet
Chemical Engineering(all)
Materials Science(all)
Data: 12-Jun-2021
Citação: Assunção, I. C. C., Sério, S., Ferreira, Q., Jones, N. C., Hoffmann, S. V., Ribeiro, P. A., & Raposo, M. (2021). Graphene oxide layer-by-layer films for sensors and devices. Nanomaterials, 11(6), Article 1556. https://doi.org/10.3390/nano11061556
Resumo: Layer-by-layer films of poly (allylamine hydrochloride) (PAH) and graphene oxide (GO) were characterized, looking at growth with the number of bilayers, morphology, and electrical properties. The PAH/GO films revealed a linear increase in absorbance with the increase in the number of deposited bilayers, allowing the determination that 10.7 ± 0.1 mg m−2 of GO is adsorbed per unit of area of each bilayer. GO absorption bands at 146, 210, 247 and 299 nm, assigned to π-π* and n-π* transitions in the aromatic ring (phenol) and of the carboxylic group, respectively, were characterized by vacuum ultraviolet spectroscopy. The morphological characterization of these films demonstrated that they are not completely uniform, with a bilayer thickness of 10.5 ± 0.7 nm. This study also revealed that the films are composed of GO and/or PAH/GO fibers and that GO is completely adsorbed on top of PAH. The electrical properties of the films reveal that PAH/GO films present a semiconductor behavior. In addition, a slight decrease in conduction was observed when films were prepared in the presence of visible light, likely due to the presence of oxygen and moisture that contributes to the damage of GO molecules.
Peer review: yes
URI: http://hdl.handle.net/10362/125421
DOI: https://doi.org/10.3390/nano11061556
ISSN: 2079-4991
Aparece nas colecções:FCT: DF - Artigos em revista internacional com arbitragem científica

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