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Cu(In,Ga)Se2 (CIGS) solar cells are amongst the best performing thin-film technologies
mainly due to post-deposition treatment (PDT) improvement of the last years. However, the
electrical simulation baseline models did not quite follow the experimental results. Moreover,
there is no baseline model for recent CIGS solar cells until the time of writing of this thesis,
whereas a scientific paper is already being written to be submitted, to provide with an updated
model.
This study provided with an updated experimentally-based baseline model for electrical
simulations in SCAPS-1D with the incorporation of the PDT effects and high-efficient device
characteristics. This baseline model produces comparable results with high-efficient 22.6 %
record cell from ZSW. In order to be even more cost and environmental competitive with the
widely used silicon photovoltaic technology, it is important the implementation of ultra-thin
devices. However, electrical and optical limitations prevent the widespread of these devices,
such as rear recombination and insufficient light absorption. The baseline model is applied to
ultra-thin absorbers, whereas an increased bulk CIGS defect density is necessary to model the
experimental data. Furthermore, simulations results reveal that by addressing these limitations
would be possible to achieve an ultra-thin solar cell with at least 19.0 % power conversion
efficiency, with open circuit voltage values even higher compared to the ZSW record cell.
On the other hand, it is shown the feasibility of the fabrication of a metal/dielectric structure
at the rear contact with industrial-friendly processes. The innovative rear contact has the
potential to tackle the rear recombination with the passivating dielectric and improving light
absorption with the high reflecting metal layer in ultra-thin devices. Such structure effectively
with both benefits has not been reported yet.
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SCAPS-1D electrical simulations baseline model CIGS solar cells ultra-thin rear contact
