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Projeto de investigação
Zinc-tin oxide memristive devices for sustainable large-scale artificial neural networks
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Printed Zinc Tin Oxide Memristors for Reservoir Computing
Publication . Azevedo Martins, Raquel; Silva, Carlos; Deuermeier, Jonas; Milano, Gianluca; Rosero-Realpe, Mateo; Parreira, Carolina; Fortunato, Elvira; Martins, Rodrigo; Kiazadeh, Asal; Carlos, Emanuel; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); John Wiley and Sons Inc.
In this work, fully patterned zinc tin oxide (ZTO) memristors are introduced using inkjet printing. By targeting a scalable, solution-based fabrication approach, highly stable devices with excellent reproducibility and minimal variability are achieved, using ZTO as the active layer, silver (Ag) as the top electrode, and molybdenum as the bottom electrode. The use of sustainable materials like ZTO enhances scalability and environmental compatibility, paving the way for next-generation, low-power neuromorphic computing. The devices successfully fulfill the fundamental criteria for in materia implementation of physical reservoir computing (PRC), including nonlinearity and fading memory property. The devices are successfully trained for classification tasks with MNIST handwritten dataset, achieving 89.4% accuracy and 86.5% by processing 4-bit and 5-bit input temporal sequences. The integration of printed memristors into hardware-based PRC architecture simplifies training complexity, making them particularly advantageous for energy-efficient, wearable AI systems.
Characterization and modeling of resistive switching phenomena in IGZO devices
Publication . Carvalho, G.; Pereira, M. E.; Silva, C.; Deuermeier, J.; Kiazadeh, A.; Tavares, V.; DCM - Departamento de Ciência dos Materiais; CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N); UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias; AIP - American Institute of Physics
This study explores the resistive switching phenomena present in 4 μm2 amorphous Indium-Gallium-Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps.
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Fundação para a Ciência e a Tecnologia
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2021.07840.BD