Moreira, MarcoCarlos, EmanuelDias, CarlosDeuermeier, JonasPereira, MariaBarquinha, PedroBranquinho, RitaMartins, RodrigoFortunato, Elvira2020-06-032020-06-032019-09-012079-4991PURE: 15978009PURE UUID: 1860a21b-b67c-4f83-9eed-4e230edec6ecScopus: 85073394211PubMed: 31500167PubMedCentral: PMC6781023WOS: 000489101900090ORCID: /0000-0002-4202-7047/work/73406612ORCID: /0000-0001-9771-8366/work/73406654ORCID: /0000-0002-5956-5757/work/90912016http://hdl.handle.net/10362/98742UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-k dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.2796987engIGZO compositionLow voltage operationSolution combustion synthesisTransparent amorphous semiconductor oxidesGeneral Chemical EngineeringGeneral Materials Sciencejournal article10.3390/nano9091273https://www.scopus.com/pages/publications/85073394211