Keragodu, TejaswiniTiwari, BhawnaNishthaBahubalindruni, PydiGoes, JoaoBarquinha, Pedro2019-12-042019-12-042018-04-26978-1-5386-4881-0PURE: 6599194PURE UUID: dd32437e-5b0c-4e2d-8ed9-6e862d7bbd54Scopus: 85057133437WOS: 000451218701079http://www.scopus.com/inward/record.url?scp=85057133437&partnerID=8YFLogxKearly career research grant with project ref. ECR/2017/000931. National Funds through FCT - Portuguese Foundation for Science and Technology POCI-01-0145-FEDER-007688This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.713288enga-IGZO TFTscomparator with oxide TFTspositive feedback operational amplifierRelaxation OscillatorVoltage Controlled OscillatorElectrical and Electronic Engineeringconference object10.1109/ISCAS.2018.8351175https://www.scopus.com/pages/publications/85057133437