Wendel, PhilippDietz, DominikDeuermeier, JonasKlein, Andreas2021-11-292021-11-292021-05-201996-1944PURE: 32945024PURE UUID: 054c98d7-f828-44ca-a1ca-c6848b27df44Scopus: 85107005802PubMed: 34065310PubMedCentral: PMC8161001WOS: 000662518500001http://hdl.handle.net/10362/128452project KL1225/8-1 effort PAK 928 UIDB/50025/2020 PTDC/NAN-MAT/30812/2017The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.383537engOxygen vacanciesResistive switchingRuthenium oxideSchottky barrierZinc oxideGeneral Materials ScienceCondensed Matter Physicsjournal article10.3390/ma14102678https://www.scopus.com/pages/publications/85107005802