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http://hdl.handle.net/10362/24020| Title: | Thin-film transistors based on p-type Cu2O thin films produced at room temperature |
| Author: | Fortunato, Elvira Maria Correia Figueiredo, Vitor Barquinha, Pedro Miguel Cândido Elamurugu, Elangovan Barros, Raquel Gonçalves, Gonçalo Park, Sang Hee Ko Martins, Rodrigo Ferrão de Paiva Hwang, Chisun |
| Keywords: | Bottom gate Electrical performance Field-effect mobilities On/off ratio P-type Polycrystalline structure rf-Magnetron sputtering Room temperature Electrodeposition Copper oxides Cuprous oxide |
| Issue Date: | 2010 |
| Abstract: | Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102. |
| Description: | ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10362/24020 |
| DOI: | https://doi.org/10.1063/1.3428434 |
| ISSN: | 0003-6951 |
| Appears in Collections: | FCT: DCM - Artigos em revista internacional com arbitragem científica |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Thin_film_transistors_based_on_p_type_Cu2O_thin_films_produced_at_room_temperature.pdf | 499,35 kB | Adobe PDF | View/Open |
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