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|Title:||Write-erase and read paper memory transistor|
|Publisher:||American Institute of Physics|
|Abstract:||We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively,complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.|
|Description:||Applied Physics Letters, Vol.93, issue 20|
|Appears in Collections:||FCT: CENIMAT - Artigos em revista internacional com arbitragem científica|
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