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Please use this identifier to cite or link to this item: http://hdl.handle.net/10362/3962

Title: Write-erase and read paper memory transistor
Authors: Martins, Rodrigo
Barquinha, Pedro
Pereira, Luís
Correia, Nuno
Gonçalves, Gonçalo
Ferreira, Isabel
Fortunato, Elvira
Issue Date: Oct-2008
Publisher: American Institute of Physics
Abstract: We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively,complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.
Description: Applied Physics Letters, Vol.93, issue 20
URI: http://hdl.handle.net/10362/3962
ISSN: 0003-6951
Appears in Collections:FCT: CENIMAT - Artigos em revista internacional com arbitragem científica

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