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|Title: ||Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by r.f. sputtering at room temperature|
|Authors: ||Fortunato, Elvira|
Costa, M. E. V.
Transparent conductive oxide
|Issue Date: ||2003|
|Publisher: ||Elsevier Science B.V.|
|Abstract: ||Highly conducting and transparent gallium doped zinc oxide thin films have been deposited at high growth rates by r.f.
magnetron sputtering at room temperature on inexpensive soda lime glass substrates. The argon sputtering pressure was varied
between 0.15 and 2.1 Pa. The lowest resistivity was 2.6=10y4 V cm (sheet resistance f6 Vysq. for a thickness f600 nm) and
was obtained at an argon sputtering pressure of 0.15 Pa and a r.f. power of 175 W. The films present an overall transmittance in
the visible spectra of approximately 90%. The increase on the resistivity for higher sputtering pressures is due to a decrease of
both, mobility and carrier concentration, and is associated to a change on the surface morphology. The low resistivity, accomplished
with a high growth rate (290 A˚ ymin) and with a room temperature deposition enables these films deposition onto polymeric
substrates for flexible optoelectronic devices.|
|Description: ||Thin Solid Films, vol. 427, nº 1-2|
|Appears in Collections:||FCT: CENIMAT - Artigos em revista internacional com arbitragem científica|
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