Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by r.f. sputtering at room temperature

Abstract

Highly conducting and transparent gallium doped zinc oxide thin films have been deposited at high growth rates by r.f. magnetron sputtering at room temperature on inexpensive soda lime glass substrates. The argon sputtering pressure was varied between 0.15 and 2.1 Pa. The lowest resistivity was 2.6=10y4 V cm (sheet resistance f6 Vysq. for a thickness f600 nm) and was obtained at an argon sputtering pressure of 0.15 Pa and a r.f. power of 175 W. The films present an overall transmittance in the visible spectra of approximately 90%. The increase on the resistivity for higher sputtering pressures is due to a decrease of both, mobility and carrier concentration, and is associated to a change on the surface morphology. The low resistivity, accomplished with a high growth rate (290 A˚ ymin) and with a room temperature deposition enables these films deposition onto polymeric substrates for flexible optoelectronic devices.