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Please use this identifier to cite or link to this item: http://hdl.handle.net/10362/3255

Título: Effect of different dopant elements on the properties of ZnO thin films
Autor: Fortunato, Elvira
Nunes, P.
Tonello, P.
Fernandes, F. Braz
Vilarinho, P.
Martins, R.
Palavras-chave: Zinc oxide
Spray pyrolysis
Doping
TCO
Thin films
Issue Date: 2002
Editora: Elsevier Science Ltd
Resumo: In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9 10 1Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9 10 3Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In.
Descrição: Vacuum, Vol. 64
URI: http://hdl.handle.net/10362/3255
ISSN: 0042-207x
Appears in Collections:FCT: CENIMAT - Artigos em revista internacional com arbitragem científica

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