Fully transparent ZnO thin-film transistor produced at room temperature

Abstract

Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess hard saturation with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V-1 s-1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.